Li, Zhi-Yue https://orcid.org/0000-0001-9437-1002
Yang, Hao-Zhi
Chen, Sheng-Chi https://orcid.org/0000-0002-0527-3425
Lu, Ying-Bo https://orcid.org/0000-0001-7799-8751
Xin, Yan-Qing
Yang, Tian-Lin
Sun, Hui
Funding for this research was provided by:
Natural Science Foundation of Shandong Province (ZR2018QEM002)
Province Science and Technology Project of Shandong (2014GGX102022)
Ministry of Science and Technology, Taiwan (105-2221-E-131-010)
National Natural Science Foundation of China (11504202)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2017-11-16
Date accepted: 2018-03-19
Online publication date: 2018-04-04