Wang, Caiwei https://orcid.org/0000-0003-2539-2613
Jiang, Yang
Ma, Ziguang
Zuo, Peng
Yan, Shen
Die, Junhui
Wang, Lu
Jia, Haiqiang
Wang, Wenxin
Chen, Hong
Funding for this research was provided by:
The National Key Research and Development Program of China (2016YFB0400300, 2016YFB0400600)
Innovative clean-energy research and application program of Beijing Municipal Science and Technology Commission (Z151100003515001)
The National Key Technology R&D Program of China (2016YFB0400302)
National Natural Science Foundation of China (11374340, 11474205, 11574362, 61210014)
Journal title: Journal of Physics D: Applied Physics
Article type: lett
Article title: Rectifying behavior in the GaN/graded-AlxGa1−xN/GaN double heterojunction structure
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2017-12-28
Date accepted: 2018-03-22
Online publication date: 2018-04-30