Sun, Yabin https://orcid.org/0000-0002-3783-2885
Liu, Ziyu
Li, Xiaojin
Ren, Jiaqi
Zheng, Fanglin
Shi, Yanling
Funding for this research was provided by:
Shanghai Sailing Program (YF1404700)
National Natural Science Foundation of China (61574056, 61704056)
National Science and Technology Major Project (2016ZX02301003)
Science and Technology Commission of Shanghai Municipality (14DZ2260800)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-02-09
Date accepted: 2018-05-25
Online publication date: 2018-06-19