Zhang, S X https://orcid.org/0000-0003-2141-5208
Liu, J
Zeng, J
Hu, P P
Maaz, K
Xu, L J
Duan, J L
Zhai, P F
Li, Z Z
Liu, L
Funding for this research was provided by:
Natural Science Foundation of Gansu Province (17JR5RA316)
National Natural Science Foundation of China (11505243)
Article Title: Electronic transport in MoSe 2 FETs modified by latent tracks created by swift heavy ion irradiation
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2018-10-15
Date Accepted: 2019-01-10
Online publication date: 2019-01-28