Li, Jun https://orcid.org/0000-0003-0124-1757
Chen, Qi
Yang, Yao-Hua https://orcid.org/0000-0001-5927-1057
Zhou, You-Hang
Zhong, De-Yao https://orcid.org/0000-0003-3184-2027
Zhu, Wen-Qing https://orcid.org/0000-0001-5055-4771
Zhang, Jian-Hua
Zhang, Zhi-Lin
Funding for this research was provided by:
National Science Foundation for Distinguished Young Scholars of China (51725505)
Shanghai Science and Technology Commission (15JC1402000)
National Natural Science Foundation of China (61674101)
Science and Technology Commission of Shanghai Municipality Program (17DZ2281700)
Article Title: Sr:F co-doping of In 2 O 3 thin film and its dual inhibition effect on trap states to achieve a high stability thin film transistor deposited by solution process
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-03-03
Date Accepted: 2019-05-09
Online publication date: 2019-06-03