Cui, Peng https://orcid.org/0000-0001-6216-2855
Zhang, Jie https://orcid.org/0000-0001-6712-433X
Yang, Tzu-Yi https://orcid.org/0000-0002-2518-725X
Chen, Hang https://orcid.org/0000-0002-2341-3815
Zhao, Haochen https://orcid.org/0000-0002-0651-7655
Lin, Guangyang https://orcid.org/0000-0003-4827-4935
Wei, Lincheng https://orcid.org/0000-0003-1589-5436
Xiao, John Q https://orcid.org/0000-0001-7805-8155
Chueh, Yu-Lun https://orcid.org/0000-0002-0155-9987
Zeng, Yuping https://orcid.org/0000-0002-6128-8103
Article Title: Effects of N 2 O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-08-26
Date Accepted: 2019-11-13
Online publication date: 2019-12-03