Ke, Shaoying https://orcid.org/0000-0003-2723-474X
Zhou, Jinrong
Wang, Ziwei
Huang, Donglin
Wang, Yuxiang
Peng, Qiang
Li, Cheng https://orcid.org/0000-0001-8405-3369
Chen, Songyan https://orcid.org/0000-0002-7373-772X
Funding for this research was provided by:
National Natural Science Foundation of China (11673019, 61534005, 61974122)
National Key Research and Development Program of China (2018YFB2200103)
General Armaments Department of China (6140721040411)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics
Copyright information: © 2020 IOP Publishing Ltd
Publication dates
Date received: 2019-10-10
Date accepted: 2019-12-02
Online publication date: 2020-02-18