Ke, Shaoying https://orcid.org/0000-0003-2723-474X
Zhou, Jinrong
Wang, Ziwei
Huang, Donglin
Wang, Yuxiang
Peng, Qiang
Li, Cheng https://orcid.org/0000-0001-8405-3369
Chen, Songyan https://orcid.org/0000-0002-7373-772X
Funding for this research was provided by:
National Natural Science Foundation of China (11673019)
National Key Research and Development Program of China (2018YFB2200103)
General Armaments Department of China (6140721040411)
Article Title: Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
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Publication dates
Date Received: 2019-10-10
Date Accepted: 2019-12-02
Online publication date: 2020-02-18