Polyakov, A Y
Haller, C
Butté, R https://orcid.org/0000-0002-8474-217X
Smirnov, N B
Alexanyan, L A
Shikoh, A S
Shchemerov, I V
Chernykh, S V
Lagov, P B
Pavlov, Yu S https://orcid.org/0000-0003-0540-8286
Kochkova, A I
Carlin, J F
Mosca, M https://orcid.org/0000-0002-6612-1572
Grandjean, N
Pearton, S J https://orcid.org/0000-0001-6498-1256
Funding for this research was provided by:
Russian Ministry of Science and Education (K4-2018-024)
CTI-KTI (175191.PFEN-NM)
Article Title: Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-05-19
Date Accepted: 2020-07-16
Online publication date: 2020-08-10