Bin Anooz, S https://orcid.org/0000-0003-4795-7785
Grüneberg, R
Chou, T-S
Fiedler, A https://orcid.org/0000-0003-3404-0804
Irmscher, K https://orcid.org/0000-0001-9859-4465
Wouters, C https://orcid.org/0000-0002-0742-168X
Schewski, R https://orcid.org/0000-0001-8252-4147
Albrecht, M https://orcid.org/0000-0003-1835-052X
Galazka, Z https://orcid.org/0000-0003-0812-2873
Miller, W https://orcid.org/0000-0002-3730-6260
Schwarzkopf, J https://orcid.org/0000-0002-8919-3608
Funding for this research was provided by:
European Regional Development Fund (1.8/15)
Bundesministerium für Bildung und Forschung (03VP03712)
Deutsche Forschungsgemeinschaft (WA-1453/3-1)
Article Title: Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3thin films grown by MOVPE
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd
Publication dates
Date Received: 2020-07-15
Date Accepted: 2020-09-09
Online publication date: 2020-10-22