Hartmann, P https://orcid.org/0000-0003-3572-1310
Wang, L https://orcid.org/0000-0002-3106-2779
Nösges, K
Berger, B https://orcid.org/0000-0001-7053-2545
Wilczek, S https://orcid.org/0000-0003-0583-4613
Brinkmann, R P https://orcid.org/0000-0002-2581-9894
Mussenbrock, T https://orcid.org/0000-0001-6445-4990
Juhasz, Z https://orcid.org/0000-0003-0677-8588
Donkó, Z https://orcid.org/0000-0003-1369-6150
Derzsi, A https://orcid.org/0000-0002-8005-5348
Lee, Eunwoo
Schulze, J https://orcid.org/0000-0001-7929-5734
Funding for this research was provided by:
Deutsche Forschungsgemeinschaft (MU 2332/6-1)
China Scholarship Council (201906060024)
Nemzeti Kutatási Fejlesztési és Innovációs Hivatal (FK-128924)
Samsung Electronics University R&D Program
Article Title: Control of electron velocity distributions at the wafer by tailored voltage waveforms in capacitively coupled plasmas to compensate surface charging in high-aspect ratio etch features
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2021 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2021-01-19
Date Accepted: 2021-03-25
Online publication date: 2021-04-08