Funding for this research was provided by:
National Research Foundation Singapore (NRF2017-NRF-ANR003 GaNGUN project)
Article Title: Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
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Publication dates
Date Received: 2021-08-13
Date Accepted: 2021-10-28
Online publication date: 2021-11-25