Lee, Y S https://orcid.org/0000-0003-0900-166X
Kim, S J https://orcid.org/0000-0001-7782-7194
Lee, J J https://orcid.org/0000-0002-0298-5638
Cho, C H
Seong, I H
Funding for this research was provided by:
National Research Council of Science and Technology (CAP-17-02-NFRI)
National Research Foundation of Korea (NRF-2020R1A6A1A03047771)
Ministry of Trade, Industry and Energy (Technology Innovation Program (20014366))
Korea Institute of Machinery and Materials (KIMM Institutional Program (NK236F))
Korea Institute for Advancement of Technology (P0008458)
Korea Semiconductor Research Consortium (20009818)
Korea Institute of Energy Technology Evaluation and Planning (20202010100020)
Korea Evaluation Institute of Industrial Technology (the Next-generation Intelligence semiconductor R&D)
Article Title: Purgeless atomic layer etching of SiO2
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
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Publication dates
Date Received: 2022-01-25
Date Accepted: 2022-05-30
Online publication date: 2022-07-01