Chen, Kuangli
Su, Yuanzhang
Ruan, Jiajia
Cai, Yonglian
Zhu, Liyang
Zhang, Bo
Funding for this research was provided by:
Zhuhai Industry-University Research Cooperation Project (ZH22017001210041PWC)
National Key Research and Development Program of China (2021YFB3600900)
Guangdong Basic and Applied Basic Research Foundation (2019A1515011522)
National Natural Science Foundation of China (62174019)
Article Title: A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2022 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2022-04-29
Date Accepted: 2022-09-02
Online publication date: 2022-09-30