Liu, Xinghua https://orcid.org/0000-0002-0274-2839
Ren, Fang-Fang https://orcid.org/0000-0001-5598-9512
Wang, Zhengpeng
Sun, Xinyu
Yang, Qunsi https://orcid.org/0000-0002-5227-6258
Wang, Yiwang
Ye, Jiandong https://orcid.org/0000-0002-3985-6768
Chen, Xiufang
Xu, Wei-Zong
Zhou, Dong
Xu, Xiangang
Zhang, Rong
Lu, Hai
Funding for this research was provided by:
Innovation Program for Quantum Science and Technology (2021ZD0303400)
National Natural Science Foundation of China (62234007)
Article Title: Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2022-11-03
Date Accepted: 2023-03-21
Online publication date: 2023-04-11