Sun, Nan https://orcid.org/0000-0002-1025-9644
Dai, Jianxun
Huang, Huolin https://orcid.org/0000-0003-4721-9459
Zhang, Jiayu
Lei, Yun
Wang, Ronghua
Tao, Pengcheng
Liu, Yanhong https://orcid.org/0000-0001-6999-7062
Song, Shukuan
Ren, Yongshuo
Cheng, Wanxi
Liang, Huinan
Funding for this research was provided by:
Application Fundamental Research Project of Liaoning Province (2022JH2/101300259)
Science and Technology Innovation Fund of Dalian (2022JJ12GX011)
National Science Foundation of China (61971090)
Fundamental Research Funds for the Central Universities (DUT23YG102)
Article Title: Improved breakdown voltage and dynamic Ron characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
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Publication dates
Date Received: 2024-07-19
Date Accepted: 2024-10-28
Online publication date: 2024-11-07