Ma, Zhuang https://orcid.org/0009-0001-8222-6278
Li, Jitao
Song, Hongquan https://orcid.org/0000-0003-2746-4924
Wang, Yujie
Ma, Huizhong
Zhu, Hongxia
Xu, Yiguo https://orcid.org/0009-0000-9931-2570
Wang, Wenjie
Yu, Heng
Wang, Gui
Funding for this research was provided by:
Doctoral Specialized Project of Nanyang Normal University (2025ZX005)
High-level Talents Research and Startup Foundation Projects for Doctors of Zhoukou Normal University (ZKNUC2023013)
Key Scientific Research Project of Colleges and Universities in Henan Province, China (25A140020)
Article Title: Semiconductor-to-metal transition in 2D ferroelectric In2Se3/Te heterobilayers: applications for non‐volatile memory devices
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-12-13
Date Accepted: 2025-02-25
Online publication date: 2025-03-05