Das, U K https://orcid.org/0000-0002-0343-6710
Theisen, R
Hua, A
Upadhyaya, A
Lam, I
Mouri, T K
Jiang, N
Hauschild, D
Weinhardt, L
Yang, W
Rohatgi, A
Heske, C
Funding for this research was provided by:
Solar Energy Technologies Office (DE-EE0008554)
U.S. DOE Office of Science User Facility (DE-AC02-05CH11231)
Article Title: Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction
Journal Title: Journal of Physics: Condensed Matter
Article Type: paper
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Publication dates
Date Received: 2021-06-02
Date Accepted: 2021-08-18
Online publication date: 2021-09-03