Fiorenza, P https://orcid.org/0000-0002-9633-7892
Alessandrino, M S
Carbone, B
Di Martino, C
Russo, A
Saggio, M
Venuto, C
Zanetti, E
Giannazzo, F https://orcid.org/0000-0002-0074-0469
Roccaforte, F https://orcid.org/0000-0001-8632-0870
Funding for this research was provided by:
Electronic Components and Systems for European Leadership (783158)
Article Title: Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
Journal Title: Nanotechnology
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-08-26
Date Accepted: 2019-12-09
Online publication date: 2020-01-08