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mr-EBL: ultra-high sensitivity negative-tone electron beam resist for highly selective silicon etching and large-scale direct patterning of permanent structures

Crossref DOI link: https://doi.org/10.1088/1361-6528/abeded

Published Online: 2021-03-25

Published Print: 2021-06-11

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Taal, Adriaan J https://orcid.org/0000-0002-1649-2826
Rabinowitz, Jake https://orcid.org/0000-0001-9671-6860
Shepard, Kenneth L https://orcid.org/0000-0003-0665-6775
Funding

Funding for this research was provided by:

Defense Advanced Research Projects Agency (N6600117C4012)

National Institutes of Health (U01NS090596)
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Article Title: mr-EBL: ultra-high sensitivity negative-tone electron beam resist for highly selective silicon etching and large-scale direct patterning of permanent structures

Journal Title: Nanotechnology

Article Type: paper

Copyright Information: © 2021 IOP Publishing Ltd

Publication dates

Date Received: 2020-03-08

Date Accepted: 2021-03-11

Online publication date: 2021-03-25

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