Meng, Wei
Xiao, Dong-Qi
Luo, Bin-Bin
Wu, Xiaohan
Zhu, Bao
Liu, Wen-Jun
Ding, Shi-Jin https://orcid.org/0000-0002-5766-089X
Funding for this research was provided by:
National Natural Science Foundation of China (61874029)
National Key Research and Development Program of China (2021YFA1202600)
Article Title: Performance improvement of Hf0.45Zr0.55O x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO x channels
Journal Title: Nanotechnology
Article Type: paper
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Publication dates
Date Received: 2022-10-25
Date Accepted: 2023-01-26
Online publication date: 2023-02-13