Li, Jiye https://orcid.org/0000-0001-6648-0615
Guan, Yuhang
Li, Jinxiong https://orcid.org/0000-0001-5284-9020
Zhang, Yuqing
Zhang, Yuhan
Chan, ManSun
Wang, Xinwei https://orcid.org/0000-0002-1191-8162
Lu, Lei
Zhang, Shengdong
Funding for this research was provided by:
National Key Research and Development Program (2022YFB3607100)
Shenzhen Municipal Scientific Program (JCYJ20200109140601691, SGDX20190918105001787, SGDX20201103095610029, SGDX20201103095607022, GXWD20201231165807007-20200807025846001)
Article Title: Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors
Journal Title: Nanotechnology
Article Type: paper
Copyright Information: © 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2022-12-15
Date Accepted: 2023-03-24
Online publication date: 2023-04-12