Zhu, Xiaogang
Shen, Zhanwei https://orcid.org/0000-0002-4693-2503
Wang, Z J https://orcid.org/0000-0002-3216-8620
Liu, Zhengran
Miao, Yuyang
Yue, Shizhong
Fu, Zhao
Li, Zihao
Zhang, Yuning
Hong, Rongdun https://orcid.org/0000-0003-4176-8465
Wu, Shaoxiong
Chen, Xiaping
Cai, Jiafa
Fu, Deyi
Zhang, Feng https://orcid.org/0000-0002-1163-2498
Funding for this research was provided by:
National Natural Science Foundation of China (62274137 and 62104222)
Fundamental Research Funds for the Central Universities (20720230103 and 20720220026)
Natural Science Foundation of Jiangxi Province of China for Distinguished Young Scholars (S2021QNZD2L0013)
Natural Science Foundation of Jiangxi Province (20232BAB202043)
the State Key Laboratory of Advanced Power Transmission Technology (GEIRI-SKL-2022-005)
the Science and Technology Project of Fujian Province of China (2020I0001)
National Key Research and Development Program of China (2018YFB0905700)
Article Title: Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC
Journal Title: Nanotechnology
Article Type: paper
Copyright Information: © 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-01-17
Date Accepted: 2024-04-04
Online publication date: 2024-04-23