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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO<sub>2</sub>by atomic layer deposition: leakage current and density of states reduction

Crossref DOI link: https://doi.org/10.1088/1361-6641/aa5fcb

Published Online: 2017-03-24

Published Print: 2017-04-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Stoklas, R https://orcid.org/0000-0003-4643-830X
Gregušová, D

Blaho, M

Fröhlich, K

Novák, J

Matys, M

Yatabe, Z https://orcid.org/0000-0003-2069-6677
Kordoš, P

Hashizume, T
Funding

Funding for this research was provided by:

Centre of Excellence for New Technologies in Electrical Engineering (26240120011)

Vedecka Grantova Agenturra MSVVaS SR a SAV (2/0105/13)

Vedecka Grantova Agenturra MSVVaS SR a SAV (2/0138/14)

Agentura na Podporu Vyskumu a Vyvoja (14-297)
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More Information

Journal title: Semiconductor Science and Technology

Article type: paper

Article title: Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2by atomic layer deposition: leakage current and density of states reduction

Copyright information: © 2017 IOP Publishing Ltd

Publication dates

Date received: 2016-11-03

Date accepted: 2017-02-10

Online publication date: 2017-03-24

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