Jang, Hyunchul
Kim, Byongju
Koo, Sangmo
Ko, Dae-Hong
Funding for this research was provided by:
Korea Evaluation Institute of Industrial Technology (10045216)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Formation of a Ge-rich Si1−x Ge x (x > 0.9) fin epitaxial layer condensed by dry oxidation
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-05-10
Date accepted: 2017-09-07
Online publication date: 2017-09-29