Kubo, Toshiharu https://orcid.org/0000-0001-7188-7751
Egawa, Takashi
Funding for this research was provided by:
Aichi Synchrotron Radiation Center, Aichi Science & Technology Foundation (Proposal No. 2015PA010)
Japan Science and Technology Agency (Super Cluster Program)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-08-17
Date accepted: 2017-10-31
Online publication date: 2017-11-20