Li, Zhen
Yang, Zhengchun https://orcid.org/0000-0003-4494-9499
Wu, Jiagang
Zhou, Baozeng
Bao, Qiwen
Zhang, Kailiang
Zhao, Jinshi
Wei, Jun
Funding for this research was provided by:
National Natural Science Foundation of China (51472169, 51502203)
Tianjin Young Overseas High-level Talent Plans (01001502)
Special Program of Talent Development for High-Level Innovation and Entrepreneurship Team in Tianjin
Tianjin Science and Technology Foundation (17ZXZNGX00090)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Low leakage current resistive memory based on Bi1.10 (Fe0.95Mn0.05) O3 films
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-04-20
Date accepted: 2018-07-13
Online publication date: 2018-07-30