Zhu, Gengchang https://orcid.org/0000-0002-8971-4960
Wang, Yiming
Xin, Qian https://orcid.org/0000-0003-4605-5894
Xu, Mingsheng
Chen, Xiufang
Xu, Xiangang
Feng, Xianjin
Song, Aimin https://orcid.org/0000-0001-6550-518X
Funding for this research was provided by:
National Key Research and Development Program of China (2016YFA0201800, 2016YFA0301200)
Engineering and Physical Sciences Research Council (EP/N021258/1)
National Natural Science Foundation of China (11374185)
Key Research and Development Program of Shandong Province, China (2016GGX104013, 2016GGX4101, 2017GGX201007)
CAEP THz Science and Technology Foundation (CAEPTHZ201409)
Suzhou Planning Projects of Science and Technology (SYG201616)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-06-01
Date accepted: 2018-08-08
Online publication date: 2018-08-28