Colston, Gerard
Myronov, Maksym https://orcid.org/0000-0001-7757-2187
Funding for this research was provided by:
Engineering and Physical Sciences Research Council (EP/J001074/1)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-06-29
Date accepted: 2018-09-03
Online publication date: 2018-10-12