Barnscheidt, Y https://orcid.org/0000-0001-5757-1371
Schmidt, J https://orcid.org/0000-0001-7962-1712
Wetzel, G
Tetzlaff, D
Wietler, T F
Osten, H J
Funding for this research was provided by:
Deutsche Forschungsgemeinschaft (389061803)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-06-25
Date accepted: 2018-09-03
Online publication date: 2018-09-26