Hodgson, P D https://orcid.org/0000-0001-5813-8772
Bentley, M
Delli, E
Beanland, R https://orcid.org/0000-0003-1749-4134
Wagener, M C
Botha, J R
Carrington, P J https://orcid.org/0000-0003-2107-5602
Funding for this research was provided by:
Joy Welch Educational Trust
Lancaster University Research Comittee
Engineering and Physical Sciences Research Council (EP/N018605/1)
Royal Academy of Engineering (10216/114)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy
Copyright information: © 2018 IOP Publishing Ltd
License information: cc-by Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2018-09-07
Date accepted: 2018-10-04
Online publication date: 2018-11-14