Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-07-09
Date accepted: 2018-10-12
Online publication date: 2018-11-05