Golovynskyi, S https://orcid.org/0000-0002-1864-976X
Datsenko, O I https://orcid.org/0000-0002-4461-1925
Seravalli, L https://orcid.org/0000-0003-2784-1785
Kondratenko, S V
Kulinichenko, O
Trevisi, G https://orcid.org/0000-0002-4011-4358
Frigeri, P https://orcid.org/0000-0003-4319-4522
Gombia, E
Golovynska, I https://orcid.org/0000-0003-3916-6588
Li, Baikui
Qu, Junle https://orcid.org/0000-0001-7833-4711
Funding for this research was provided by:
National Natural Science Foundation of China (61525503, 61604098, 61620106016, 61722508, 81727804)
COST Action ‘Nanoscale Quantum Optics’ of European Union
Project of Department of Education of Guangdong Province (2015CB352005, 2016KCXTD007)
Guangdong Natural Science Foundation Innovation Team (2014A030312008)
Shenzhen Science and Technology Innovation Commission (GJHZ20160226202139185, JCYJ20150930104948169, JCYJ20160328144746940, JCYJ20170412110137562)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Kinetics peculiarities of photovoltage in vertical metamorphic InAs/InGaAs quantum dot structures
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2018-10-24
Date accepted: 2019-01-29
Online publication date: 2019-06-24