Chen, Jianqiu
Hu, Shiben https://orcid.org/0000-0003-4322-1754
Ning, Honglong https://orcid.org/0000-0001-9518-5738
Fang, Zhiqiang
Tao, Ruiqiang
Zhou, Yicong
Cai, Wei
Liu, Xianzhe
Yao, Rihui
Peng, Junbiao
Funding for this research was provided by:
Guangzhou Science and Technology Project (201804020033)
National Key R&D Program of China (No.2016YFB0401504 and 2016YFF0203600)
National Natural Science Foundation of China (Grant.51771074, 51521002 and U1601651)
National Key Basic Research and Development Program of China (973 program, Grant No.2015CB655004)
Guangdong Natural Science Foundation (No.2016A030313459 and 2017A030310028)
Guangdong Science and Technology Project (No.2016B090907001, 2016A040403037, 2016B090906002,)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Evaluation of Nd–Al doped indium-zinc oxide thin-film transistors by a μ-PCD method
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2019-01-02
Date accepted: 2019-03-12
Online publication date: 2019-04-09