Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer though TCAD simulation
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2018-12-25
Date accepted: 2019-03-27
Online publication date: 2019-05-08