Du, Lulu
Xin, Qian https://orcid.org/0000-0003-4605-5894
Xu, Mingsheng
Liu, Yaxuan
Liang, Guangda
Mu, Wenxiang
Jia, Zhitai https://orcid.org/0000-0002-7534-8082
Wang, Xinyu https://orcid.org/0000-0003-4143-334X
Xin, Gongming
Tao, Xu-Tang
Song, Aimin https://orcid.org/0000-0001-6550-518X
Funding for this research was provided by:
the Natural Science Foundation of Shandong Province (ZR201709260014, ZR2018MF029)
the National Key Research and Development Program of China (2016YFA0201800, 2016YFA0301200, 2016YFB0406502)
Engineering and Physical Sciences Research Council (EP/N021258/1)
the Fundamental Research Funds of Shandong University (2015WLJH36, 2016WLJH44, 2017TB0021, 2018JC037, 2018WLJH87)
the Key Research and Development Program of Shandong Province (2017GGX10111, 2017GGX10121, 2018GGX101027)
China Postdoctoral Science Foundation funded project (2016M590634)
the Natural Science Foundation of China (61504044)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2018-12-21
Date accepted: 2019-04-08
Online publication date: 2019-06-06