Linnarsson, M K https://orcid.org/0000-0002-0292-224X
Hallén, A https://orcid.org/0000-0002-8760-1137
Funding for this research was provided by:
Vetenskapsrådet (2017-00646-9)
Stiftelsen för Strategisk Forskning (RIF14-0053)
Norges Forskningsråd (NORFAB 197 411/v30)
Article Title: Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd
Publication dates
Date Received: 2019-06-25
Date Accepted: 2019-09-04
Online publication date: 2019-10-01