Funding for this research was provided by:
National Natural Science Foundation of China (No.61421005)
111 Project (B18001)
Article Title: Statistical analysis on the effects of heavy ion irradiation on 65 nm bulk silicon MOS devices
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-06-20
Date Accepted: 2019-09-09
Online publication date: 2019-10-10