Funding for this research was provided by:
National Natural Science Foundation of China (61674117)
Key Program of National Natural Science Foundation of China (61434006)
Article Title: A new lattice-matched In 0.17 Al 0.83 N ∼ GaN based heterostructure IMPATT diode for terahertz application
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-06-20
Date Accepted: 2019-09-24
Online publication date: 2019-10-09