Yao, Weizhen https://orcid.org/0000-0001-7064-8628
Wang, Lianshan
Li, Fangzheng
Meng, Yulin https://orcid.org/0000-0002-6336-3285
Yang, Shaoyan
Wang, Zhanguo
Funding for this research was provided by:
National Natural Science Foundation of China (51727901, 61774142)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2019-07-22
Date accepted: 2019-10-04
Online publication date: 2019-10-29