Yao, Weizhen https://orcid.org/0000-0001-7064-8628
Wang, Lianshan
Li, Fangzheng
Meng, Yulin https://orcid.org/0000-0002-6336-3285
Yang, Shaoyan
Wang, Zhanguo
Funding for this research was provided by:
National Natural Science Foundation of China (51727901)
Article Title: Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-07-22
Date Accepted: 2019-10-04
Online publication date: 2019-10-29