Funding for this research was provided by:
IC Design Education Center
National Research Foundation of Korea (2017R1A2A2A05069708)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Device design guideline for junctionless gate-all-around nanowire negative-capacitance FET with HfO2-based ferroelectric gate stack
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2019-09-02
Date accepted: 2019-11-13
Online publication date: 2019-11-29