Zheng, Xuefeng
Tang, Zhenling https://orcid.org/0000-0003-3188-2651
Lv, Ling
Bai, Dandan
Wang, Chong
Mao, Wei https://orcid.org/0000-0002-9034-2236
Cao, Yanrong
Ma, Xiaohua https://orcid.org/0000-0002-1331-6253
Hao, Yue
Funding for this research was provided by:
National Natural Science Foundation of China (11690042, 61574112, 61974111, 61974115, 61634005)
fund of Innovation Center of Radiation Application (KFZC2018040202)
National pre-research foundation of China (31512050402)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2019-07-23
Date accepted: 2019-11-14
Online publication date: 2019-12-02