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An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects

Crossref DOI link: https://doi.org/10.1088/1361-6641/ab591a

Published Online: 2019-12-10

Published Print: 2020-01-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Durai, Suresh https://orcid.org/0000-0001-9324-8002
Raj, Srinivasan

Manivannan, Anbarasu https://orcid.org/0000-0002-1834-0578
Funding

Funding for this research was provided by:

Science and Engineering Research Board (EEQ/2017/000638)
License Information

Text and Data Mining valid from 2019-12-10

Version of Record valid from 2019-12-10
More Information

Journal title: Semiconductor Science and Technology

Article type: paper

Article title: An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects

Copyright information: © 2019 IOP Publishing Ltd

Publication dates

Date received: 2019-08-15

Date accepted: 2019-11-19

Online publication date: 2019-12-10

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