Cheng, Wei-Chih https://orcid.org/0000-0002-4818-6057
He, Minghao
Lei, Siqi
Wang, Liang
Wu, Jingyi
Zeng, Fanming
Hu, Qiaoyu
Wang, Qing
Zhao, Feng
Chan, Mansun
Xia, Guangrui (Maggie)
Yu, Hongyu
Funding for this research was provided by:
Shenzhen Municipal Council of Science and Innovation (JCYJ20170412153356899)
Guangdong Science and Technology Department (2019B010128001)
Article Title: Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-09-14
Date Accepted: 2020-02-06
Online publication date: 2020-03-05