Funding for this research was provided by:
the Science and Technology Planning Project of Guangzhou, China (201607020036)
Fundamental Research Funds for The Centered Universities (19lgpy81)
the Natural Science Foundation of Guangdong Province, China (2017A030310465)
the Pengcheng Scholar Funding of Shenzhen
the Natural Science Foundation of China (61774172)
the Science and Technology Project of Guangdong Province, China (2016B090918106)
Article Title: NiO-based memristor with three resistive switching modes
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-11-25
Date Accepted: 2020-02-14
Online publication date: 2020-03-25