Fei, Xin-Xing https://orcid.org/0000-0003-1127-5918
Wang, Ying https://orcid.org/0000-0003-0790-8153
Luo, Xin
Bao, Meng-Tian
Yu, Cheng-Hao
Funding for this research was provided by:
Excellent Youth Foundation of Zhejiang Province of China (No. LR17F040001)
National Natural Science Foundation of China (No. 61774052)
Science and Technology on Analog Integrated Circuit Laboratory (No. 6142802180507)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer
Copyright information: © 2020 IOP Publishing Ltd
Publication dates
Date received: 2020-01-07
Date accepted: 2020-03-20
Online publication date: 2020-05-13