Mao, Wei https://orcid.org/0000-0002-9034-2236
He, Yuanhao https://orcid.org/0000-0003-4322-7996
Yang, Cui
Wang, Haiyong
Du, Ming
Zheng, Xuefeng
Wang, Xiaofei
Wang, Chong
Zhang, Jincheng
Hao, Yue
Funding for this research was provided by:
National Natural Science Foundation of China (Grant Nos. 61574112 and 61974111)
Article Title: A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-12-10
Date Accepted: 2020-04-06
Online publication date: 2020-06-09