Funding for this research was provided by:
Korea Institute for Advancement of Technology (P0008458)
National Research Foundation of Korea (NRF-2017R1D1A1B03029093)
Article Title: Post-annealing temperature-dependent electrical properties of thin-film transistors with a ZnO channel and HfOx gate insulator deposited by atomic layer deposition
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-12-26
Date Accepted: 2020-04-09
Online publication date: 2020-06-12