Golovynskyi, Sergii https://orcid.org/0000-0002-1864-976X
Datsenko, Oleksandr I https://orcid.org/0000-0002-4461-1925
Seravalli, Luca https://orcid.org/0000-0003-2784-1785
Kondratenko, Serhiy V https://orcid.org/0000-0002-4403-7732
Trevisi, Giovanna https://orcid.org/0000-0002-4011-4358
Frigeri, Paola https://orcid.org/0000-0003-4319-4522
Li, Baikui https://orcid.org/0000-0002-3118-5488
Qu, Junle https://orcid.org/0000-0001-7833-4711
Funding for this research was provided by:
Ministry of Education and Science of Ukraine (0119U100308)
Shenzhen University Scientific Research Start-up Foundation (860-000002110207)
Shenzhen Science and Technology Innovation Commission under Grant (JCYJ20170412110137562)
National Natural Science Foundation of China (61604098, 61525503, 61620106016)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement
Copyright information: © 2020 IOP Publishing Ltd
Publication dates
Date received: 2020-02-22
Date accepted: 2020-06-17
Online publication date: 2020-08-04