Wang, Xiameng https://orcid.org/0000-0002-1379-1281
Duan, Baoxing https://orcid.org/0000-0002-0004-1895
Yang, Xin
Yang, Yintang
Funding for this research was provided by:
Science Foundation for Distinguished Young Scholars of Shaanxi Province (2018JC-017)
111 Project (B12026)
Article Title: Novel vertical power MOSFET with partial GaN/Si heterojunction to improve breakdown voltage by breakdown point transfer terminal technology
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-04-26
Date Accepted: 2020-06-22
Online publication date: 2020-08-28