Xu, X B https://orcid.org/0000-0003-3656-2489
Li, B
Chen, Y Q https://orcid.org/0000-0001-6901-3000
Wu, Z H
He, Z Y https://orcid.org/0000-0002-0064-3626
En, Y F
Huang, Y
Article Title: Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2020 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-09-11
Date Accepted: 2020-12-03
Online publication date: 2020-12-30